Gate Drive Transformers for IGBTs
High Power Density Meets High Insulations Strength
Gate drive transformers for IGBT are the key element in the driver circuit supplying the necessary power for switching and maintaining safe galvanic separation between the intermediate circuit and the low voltage control side.
By using nanocrystalline VITROPERM® as core material, VACUUMSCHMELZE gate drive transformers combine high power density with high insulations strengths.
Benefits:
- Reinforced insulation
- Low coupling capacitance
- Low leakage inductance
- Large voltage-time area in compact designs
Gate drive transformers are typically used in the DC/DC converter of the Gate Driver Circuit for modern variable-frequency drives (VFD).
These are used in
- Elevators & escalators
- Pumps & fans
- Process automation
General Characteristics
| Design | SMT or THT |
|---|---|
| Transmission ratio (typ.) | 1:1 up to 1:3 |
| Number of windings (typ.) | ≤ 4 |
| Standard | 61558-2-16 or 61800-5-1 |
| Switching frequency | ≤ 100 kHz |
| Voltage time area | ≤ 1,000 µVs |
| Power | ≤ 45 VA |
| Main inductance | 1-5 mH |
| Leakage inductance | ≤ 10 µH |
| Coupling capacitance | ≤ 15 pF |
The new gate drive transformer T60403-F5046-X100 on Infineon’s evaluation board EVAL-1DS20I12SV for the EconoDUALTM 3 IGBT series
The selection of a suitable Gate Drive Transformer typically starts with the number of windings and transmission ratio: The required number of windings is usually given by the circuit topology while the transmission ratio is determined by the ratio between the input and output voltage.
The voltage-time area of the transformer is an important parameter as it basically couples the electric requirements with the internal magnetics. The requirements are calculated by considering the input voltage and switching frequency.
In unipolar operation half of the hysteresis loop is used, so ΔB can be considered as 0.9 T if VITROPERM® is used as core material. Accordingly, the required iron cross section AFe can stay small.
Furthermore, the insulation requirements have to be considered: They are usually related to the recurring peak voltages in the system. The parasitic parameters must also be taken into account: Low leakage inductance guarantees steep control pulses, while low coupling capacitance avoids misfirings of the IGBT. Depending on the winding design, usually a compromise has to be found between both parameters.
Gate drive transformers are typically used in the DC/DC converter of the Gate Driver Circuit for modern variable-frequency drives (VFD).
These are used in
- Elevators & escalators
- Pumps & fans
- Process automation
General Characteristics
| Design | SMT or THT |
|---|---|
| Transmission ratio (typ.) | 1:1 up to 1:3 |
| Number of windings (typ.) | ≤ 4 |
| Standard | 61558-2-16 or 61800-5-1 |
| Switching frequency | ≤ 100 kHz |
| Voltage time area | ≤ 1,000 µVs |
| Power | ≤ 45 VA |
| Main inductance | 1-5 mH |
| Leakage inductance | ≤ 10 µH |
| Coupling capacitance | ≤ 15 pF |
The new gate drive transformer T60403-F5046-X100 on Infineon’s evaluation board EVAL-1DS20I12SV for the EconoDUALTM 3 IGBT series
The selection of a suitable Gate Drive Transformer typically starts with the number of windings and transmission ratio: The required number of windings is usually given by the circuit topology while the transmission ratio is determined by the ratio between the input and output voltage.
The voltage-time area of the transformer is an important parameter as it basically couples the electric requirements with the internal magnetics. The requirements are calculated by considering the input voltage and switching frequency.
In unipolar operation half of the hysteresis loop is used, so ΔB can be considered as 0.9 T if VITROPERM® is used as core material. Accordingly, the required iron cross section AFe can stay small.
Furthermore, the insulation requirements have to be considered: They are usually related to the recurring peak voltages in the system. The parasitic parameters must also be taken into account: Low leakage inductance guarantees steep control pulses, while low coupling capacitance avoids misfirings of the IGBT. Depending on the winding design, usually a compromise has to be found between both parameters.
Downloads
Gate Drive Transformers for IGBT optimized for Infineon’s EconoDUALTM 3 Series (englisch) PI-IA 2
Product Information
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