Gate Drive Transformers for IGBTs

High Power Density Meets High Insulations Strength

Gate drive transformers for IGBT are the key element in the driver circuit supplying the necessary power for switching and maintaining safe galvanic separation between the intermediate circuit and the low voltage control side.

By using nanocrystalline VITROPERM® as core material, VACUUMSCHMELZE gate drive transformers combine high power density with high insulations strengths.

Benefits:

  • Reinforced insulation
  • Low coupling capacitance
  • Low leakage inductance
  • Large voltage-time area in compact designs

Gate drive transformers are typically used in the DC/DC converter of the Gate Driver Circuit for modern variable-frequency drives (VFD).

These are used in

  • Elevators & escalators
  • Pumps & fans
  • Process automation

General Characteristics

Design SMT or THT
Transmission ration (typ.) 1:1 up to 1:3
Number of windings (typ.) ≤ 4
Standard 61558-2-16 or 61800-5-1
Switching frequency ≤ 100 kHz
Voltage time area ≤ 1,000 µVs
Power ≤ 45 VA
Main inductance 1-5 mH
Leakage inductance ≤ 10 µH
Coupling capacitance ≤ 15 pF

 

The new gate drive transformer T60403-F5046-X100 on Infineon’s evaluation board EVAL-1DS20I12SV for the EconoDUALTM 3 IGBT series

The selection of a suitable Gate Drive Transformer typically starts with the number of windings and transmission ratio: The required number of windings is usually given by the circuit topology while the transmission ratio is determined by the ratio between the input and output voltage.

The voltage-time area of the transformer is an important parameter as it basically couples the electric requirements with the internal magnetics. The requirements are calculated by considering the input voltage and switching frequency.

In unipolar operation half of the hysteresis loop is used, so ΔB can be considered as 0.9 T if VITROPERM® is used as core material. Accordingly, the required iron cross section AFe can stay small.

Furthermore, the insulation requirements have to be considered: They are usually related to the recurring peak voltages in the system. The parasitic parameters must also be taken into account: Low leakage inductance guarantees steep control pulses, while low coupling capacitance avoids misfirings of the IGBT. Depending on the winding design, usually a compromise has to be found between both parameters. 

 

Gate drive transformers are typically used in the DC/DC converter of the Gate Driver Circuit for modern variable-frequency drives (VFD).

These are used in

  • Elevators & escalators
  • Pumps & fans
  • Process automation

General Characteristics

Design SMT or THT
Transmission ration (typ.) 1:1 up to 1:3
Number of windings (typ.) ≤ 4
Standard 61558-2-16 or 61800-5-1
Switching frequency ≤ 100 kHz
Voltage time area ≤ 1,000 µVs
Power ≤ 45 VA
Main inductance 1-5 mH
Leakage inductance ≤ 10 µH
Coupling capacitance ≤ 15 pF

 

The new gate drive transformer T60403-F5046-X100 on Infineon’s evaluation board EVAL-1DS20I12SV for the EconoDUALTM 3 IGBT series

The selection of a suitable Gate Drive Transformer typically starts with the number of windings and transmission ratio: The required number of windings is usually given by the circuit topology while the transmission ratio is determined by the ratio between the input and output voltage.

The voltage-time area of the transformer is an important parameter as it basically couples the electric requirements with the internal magnetics. The requirements are calculated by considering the input voltage and switching frequency.

In unipolar operation half of the hysteresis loop is used, so ΔB can be considered as 0.9 T if VITROPERM® is used as core material. Accordingly, the required iron cross section AFe can stay small.

Furthermore, the insulation requirements have to be considered: They are usually related to the recurring peak voltages in the system. The parasitic parameters must also be taken into account: Low leakage inductance guarantees steep control pulses, while low coupling capacitance avoids misfirings of the IGBT. Depending on the winding design, usually a compromise has to be found between both parameters. 

 

Voltage Time Area:  10 - 1160  μVs
Product Download  Ls
[µH]
 Ck
[pF]
 ∫udt
[µVs]
 Up
[kV]
UTA
[kV]
Uis
[V]
Turns RatioDesign
4021-X0841010122.51.39001:1.94THT
4021-X086103354.1N/AN/A1:1.125:1.125THT
4021-X09210310418501:1THT
4021-X116N/A31004.50.847001:1:1THT
4097-X0550.3332003.1N/A4001:1:1THT
4097-X0600.4362603.1N/A3801:1.2:1.2THT
4097-X07010251503.11.069001.5:1THT
4097-X08614.572603.118001:1:1THT
4099-X00951515030.79001:1:1/1THT
4099-X0105101304.6N/A12001:1:1:1THT
4099-X0112.42.5854.50.958501:1:1THT
4185-X0354203205.72.415001.09:1/1THT
4185-X04644050051.512002:1THT
4215-X025552004.51.2510001:1.36:1.36THT
4215-X0320.22105053.529001:1.5/1.5THT
4215-X165N/AN/A2001.6N/A11601:1:1THT
4215-X1770.35803003.2N/A6001:1:1THT
4215-X1790.6522.34406.2N/A12001:1:1THT
4215-X1800.5201706.75N/A6001:1:1THT
4225-X054N/AN/A11604.32.3N/A5.33:1:1N/A
4615-X0470.252525051.312001:1:1THT
4615-X062N/A103000.8N/A12001:1:1THT
4615-X0659103402.21.812002.9:1:1THT
4615-X0660.52525051.1N/A1:1.2:1.2THT
4615-X0671505006.75N/A6001:1:1THT
4615-X07013510051.368481:1:1.11:1.11THT
4615-X0720.51002504.50.43N/A1:1.3:1.3THT
4721-X0012862503.6N/A5001:1:1THT
4721-X0022505.55003.1N/A5001:1THT
4721-X003704.725040.65001:1THT
4721-X0042862503.617501:1:1THT
4721-X0057552503.1N/A5002:1THT
4721-X0061106.55003.1N/A5001:1:1THT
4721-X007685.52503.1N/A5003:1:1THT
4721-X012N/A1102502.50.32201:1THT
4721-X0412505.55004.5N/A5001:1THT
4721-X048360106004N/A6001:1THT
5032-X1071.51.8282.650.950010:8:8SMT
5032-X1122.83.8605N/AN/A1:1:1SMT
5046-X006N/AN/A1002.251.26001:1.1:1.1SMT
5046-X0070.313854.51.258481:1:1SMT
5046-X0086.791104.61.288481:1:1:1SMT
5046-X0111.125453N/A3002:1/1:2SMT
5046-X1000.312801.81.258481:1.2:1.2SMT

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